Atomic-scale modeling of twinning disconnections in zirconium
نویسندگان
چکیده
منابع مشابه
In situ atomic-scale observation of twinning-dominated deformation in nanoscale body-centred cubic tungsten.
Twinning is a fundamental deformation mode that competes against dislocation slip in crystalline solids. In metallic nanostructures, plastic deformation requires higher stresses than those needed in their bulk counterparts, resulting in the 'smaller is stronger' phenomenon. Such high stresses are thought to favour twinning over dislocation slip. Deformation twinning has been well documented in ...
متن کاملAtomic-scale modeling of self-positioning nanostructures
Atomic-scale finite element procedure for modeling of self-positioning nanostructures is developed. Our variant of the atomic-scale finite element method is based on a meshless approach and on the Tersoff interatomic potential function. The developed algorithm is used for determination of equilibrium configuration of atoms after nanostructure self-positioning. Dependency of the curvature radius...
متن کاملAtomic-Scale Modeling of Nanoelectronic Devices
As device features near atomic dimensions, simulations of electrical currents need to be based on a quantummechanical description of the system rather than a classical one. New phenomena appear which can be exploited for novel device characteristics, but also fundamental challenges arise when the influence of single defects can have devastating effects. From a metrological perspective, the very...
متن کاملapplication of brand personality scale in automobile industry: the study of samand’s brand personality dimensions
این تحقیق شخصیت برند سمند را در ایران با استفاده از مدل پنج بعدی آکر (1997) بعنوان یک چهارچوب بطور توصیفی سنجیده است. بنابر این چهارچوب که دراصل در 42 جزء (42 ویزگی شخصیتی) ودر پنج بعد شخصیتی طراحی شده بود ودر کشورها وصنایع مختلف آزموده شده بود, پرسنامه به زبان فارسی ترجمه شده و با استفاده از روشهای ترجمه معکوس و مصاحبه عمیق با 12 متخصص ایرانی به 38 جزء کاهش یافت. و نظرسنجی ای در پنج نمایندگی ا...
15 صفحه اولChallenges for Atomic Scale Modeling in Alternative Gate Stack Engineering
We review the challenges for atomic scale modeling of alternative gate dielectric stacks. We begin by highlighting recent achievements of state-of-the-art atomistic simulations of the Si/SiO2 system, showing how such calculations have elucidated the microscopic origins of several important experimental phenomena. For the benefit of readers who may be unfamiliar with the simulation tools, we ove...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2017
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.95.134102